dtc114gua / dtc114gka / dtc114gsa transistors digital transistors (built-in resistor) dtc114gua / dtc114gka / dtc114gsa ! ! ! ! features 1) the built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2) only the on / off conditions need to be set for operation, making device design easy. 3) higher mounting densities can be achieved. ! ! ! ! equivalent circuit c b e r e : emitter c : collector b : base ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c pc tj tstg limits 50 50 5 100 200 300 dtc114gua / dtc114gka dtc114gsa 150 ? 55~ + 150 unit v v v ma mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ! ! ! ! package, marking, and packaging specifications type dtc114gua umt3 k24 t106 3000 dtc114gka smt3 k24 t146 3000 dtc114gsa spt ? tp 5000 package marking packaging code basic ordering unit (pieces) ! ! ! ! external dimensions (units : mm) dtc114gua rohm : umt3 eiaj : sc-70 dtc114gka dtc114gsa rohm : smt3 eiaj : sc-59 rohm : spt eiaj : sc-72 (1) emitter (2) base (3) collector (1) emitter (2) base (3) collector 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 0.8 0.15 0 ~ 0.1 0.3min. 1.1 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 (1) emitter (2) collector (3) base 0.45 2.5 ( 1 ) ( 2 ) ( 3 ) ( 15min. ) 5 3 3min. 0.45 0.5 42 each lead has same dimensions each lead has same dimensions taping specifications ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 50 50 5 ? 300 ? 30 ? 7 ? ? ? ? ? ? ? 250 10 ? ? ? 0.5 580 0.3 ? ? 13 v v v a a v ? mhz k ? i c = 50 a i c = 1ma i e = 720 a v cb = 50v v eb = 4v i c = 10ma, i b = 0.5ma i c = 5ma, v ce = 5v v ce = 10v, i e =? 5ma, f = 100mhz ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency emitter-base resistance ? transition frequency of the device.
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